IGBT, Insulated Gate Bipolar Transistor, is a composite fully-regulated voltage-driven power semiconductor device consisting of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), which combines the high input impedance of MOSFET and GTR. The advantages of low conduction voltage drop. IGBT combines the advantages of the above two devices, with low drive power and reduced saturation voltage.
It is very suitable for converter systems with DC voltages of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.
SIPA 8708 is a Transparent Silicone gel for IGBT. After curing, forms buffer, self-recovery special soft material. Used to insulate moisture and other harmful pollutants from the circuit board, and provide insulation for high voltage. Another purpose is to provide stress relief to protect circuits and interconnections from high temperature and mechanical stress.
Typical applications
Electric power semiconductor IGBT, weighing sensor, automobile ECU integration module and other packaging protection IC chip, electric power telecommunication waterproof connector potting, etc.
Product packaging
Part A: 10kg/barrel, Part B: 10kg/barrel
20kg/set
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